型号:

2SB1122S-TD-E

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:TRANS PNP BIPO 1A 50V SOT89-3
详细参数
数值
产品分类 分离式半导体产品 >> 晶体管(BJT) - 单路
2SB1122S-TD-E PDF
标准包装 1,000
系列 -
晶体管类型 PNP
电流 - 集电极 (Ic)(最大) 1A
电压 - 集电极发射极击穿(最大) 50V
Ib、Ic条件下的Vce饱和度(最大) 500mV @ 50mA,500mA
电流 - 集电极截止(最大) -
在某 Ic、Vce 时的最小直流电流增益 (hFE) 100 @ 100mA,2V
功率 - 最大 500mW
频率 - 转换 150MHz
安装类型 表面贴装
封装/外壳 TO-243AA
供应商设备封装 PCP
包装 带卷 (TR)
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